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Proceedings Paper

InGaAs-GaAs strained-layer quantum well heterostructure lasers
Author(s): James J. Coleman; Pamela K. York; K. J. Beernink; Robert G. Waters
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Paper Abstract

InGaAs-GaAs strained layer quantum well heterostructure lasers offer availability of emission wavelengths in the range of 0.9-1.1 micron, otherwise largely inaccessible with semiconductor diode lasers. Here, InGaAs-GaAs strained layer lasers and laser arrays grown by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) are described. The growth conditions for preparing these strained layer structures by MOCVD are presented, and time zero characterization of oxide defined stripe broad area lasers is outlined as a function of InGaAs layer composition and thickness, relative to the critical thickness. Various structures, grown throughout the 0.9-1.1-micron wavelength range and having In mole fractions from x = 0 - 0.50, are shown to have low broad area threshold current densities (Jth less than 200 A/sq cm) and other characteristics of unstrained quantum well heterostructure lasers. Recent results indicating highly reliable CW operation of oxide stripe strained quantum well heterostructure lasers are reviewed.

Paper Details

Date Published: 1 May 1990
PDF: 5 pages
Proc. SPIE 1219, Laser Diode Technology and Applications II, (1 May 1990); doi: 10.1117/12.18237
Show Author Affiliations
James J. Coleman, Univ. of Illinois/Urbana-Champaign (United States)
Pamela K. York, Univ. of Illinois/Urbana-Champaign (United States)
K. J. Beernink, Univ. of Illinois/Urbana-Champaign (United States)
Robert G. Waters, McDonnell Douglas Electronic Systems Co. (United States)


Published in SPIE Proceedings Vol. 1219:
Laser Diode Technology and Applications II
Dan Botez; Luis Figueroa, Editor(s)

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