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Proceedings Paper

Enhancement of electroluminescence properties in delta-doped quantum well of bipolar resonant tunneling diode
Author(s): Hanyu Sheng; Soo-Jin Chua
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Paper Abstract

An analytical model of (delta) -doped quantum well is developed. The results show that by using (delta) -doped quantum well structure, the area densities of the electrons and holes in the conduction and valence bands respectively can be increased by 4 orders of magnitudes compared with the n-i-p structure. Therefore the electroluminescence enhancement can be expected for the bipolar resonant tunneling diode of (delta) -doped quantum well.

Paper Details

Date Published: 5 August 1994
PDF: 3 pages
Proc. SPIE 2321, Second International Conference on Optoelectronic Science and Engineering '94, (5 August 1994); doi: 10.1117/12.182139
Show Author Affiliations
Hanyu Sheng, National Univ. of Singapore (Singapore)
Soo-Jin Chua, National Univ. of Singapore (Singapore)


Published in SPIE Proceedings Vol. 2321:
Second International Conference on Optoelectronic Science and Engineering '94
Wang Da-Heng; Anna Consortini; James B. Breckinridge, Editor(s)

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