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Proceedings Paper

Electroluminescence properties of bipolar resonant tunneling diode
Author(s): Hanyu Sheng; Soo-Jin Chua
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Paper Abstract

An electroluminescence model of bipolar resonant tunneling diode is carried out. The current is the sum of electron and hole current. The electron and hole density at resonant level of quantum well are related with the electron and hole current respectively. Radiative recombination rate formula is derived from matrix element, electrons and holes distribution. Result shows the large on-off ratio of light output can be achieved by the bipolar resonant tunneling diode.

Paper Details

Date Published: 5 August 1994
PDF: 3 pages
Proc. SPIE 2321, Second International Conference on Optoelectronic Science and Engineering '94, (5 August 1994); doi: 10.1117/12.182138
Show Author Affiliations
Hanyu Sheng, National Univ. of Singapore (Singapore)
Soo-Jin Chua, National Univ. of Singapore (Singapore)


Published in SPIE Proceedings Vol. 2321:
Second International Conference on Optoelectronic Science and Engineering '94
Wang Da-Heng; Anna Consortini; James B. Breckinridge, Editor(s)

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