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Proceedings Paper

Carrier injection type optical switch using oxygen ion implantation as carrier confinement
Author(s): Ji-Ning Duan; Wanru Zhuang; Peisheng Yang; Zhiwen Shi; Furong Sun; Junhua Gao; Zhengzhong Zou
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Paper Abstract

Based on the band-filling effect, a novel intersectional waveguide semiconductor optical switch was fabricated and operated by carrier injection. Other than the conventional n-i-n structure and Zn-diffusion technology, a p-i-n structure was grown and O+ was implanted into the p-type layer to achieve restriction of injected carriers. This technology, which is published for the first time as we know, gets rid of the lateral expansion in the process of Zn-diffusion. It can be used to obtain narrow carrier injection region and perpendicular reflecting plane, and to exploit the injected carriers efficiently. At the working wavelength (lambda) equals 1.3 micrometers , the extinction ratio is as high as 15 dB with injected current 50 mA.

Paper Details

Date Published: 5 August 1994
PDF: 3 pages
Proc. SPIE 2321, Second International Conference on Optoelectronic Science and Engineering '94, (5 August 1994); doi: 10.1117/12.182136
Show Author Affiliations
Ji-Ning Duan, Institute of Semiconductors (China)
Wanru Zhuang, Institute of Semiconductors (China)
Peisheng Yang, Institute of Semiconductors (China)
Zhiwen Shi, Institute of Semiconductors (China)
Furong Sun, Institute of Semiconductors (China)
Junhua Gao, Institute of Semiconductors (China)
Zhengzhong Zou, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 2321:
Second International Conference on Optoelectronic Science and Engineering '94
Wang Da-Heng; Anna Consortini; James B. Breckinridge, Editor(s)

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