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Proceedings Paper

Study of photovoltaic properties of GexSi1-x/Si quantum well structures
Author(s): Wenzhang Zhu; Qihua Shen; Jintai Chen
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Paper Abstract

In this paper, we report the photovoltage spectroscopy study of type-I and type-II GeSi/Si strained layer quantum wells at different temperatures ranging from 18 to 300 K. The experimental results show that for all the samples studied there is strong photovoltage at longwave bands in which the photon energy is less than the bandgap of Si. Four intrinsic exciton optical transitions and the saturation of exciton absorption have been observed. The mechanism for the photovoltaic effect in GeSi/Si quantum well structures is discussed.

Paper Details

Date Published: 5 August 1994
PDF: 4 pages
Proc. SPIE 2321, Second International Conference on Optoelectronic Science and Engineering '94, (5 August 1994); doi: 10.1117/12.182131
Show Author Affiliations
Wenzhang Zhu, Jimei Navigation Institute (China)
Qihua Shen, Xiamen Univ. (China)
Jintai Chen, Jimei Navigation Institute (China)


Published in SPIE Proceedings Vol. 2321:
Second International Conference on Optoelectronic Science and Engineering '94
Wang Da-Heng; Anna Consortini; James B. Breckinridge, Editor(s)

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