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Proceedings Paper

Comparative study on photoluminescence of porous silicon fabricated by different methods
Author(s): Yingjun Gao; Deepak G. Uttamchandani; Brian Culshaw
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Paper Abstract

Different methods, including electrochemical etching, chemical staining, chemical staining plus electrochemical etching and immersion in boiling water have been used for fabricating or treating porous silicon samples. Comparative photoluminescence spectra of porous silicon samples. Comparative photoluminescence spectra of porous silicon fabricated by these techniques have been obtained. Porous silicon arrays have also been fabricated by electrochemical etching and chemical staining plus electrochemical etching on both high and low resistivity silicon wafers. Blue and green photoluminescence (at 440 nm, 460 nm and 540 nm peak wavelengths) on low resistivity silicon wafer was obtained from porous silicon made by electrochemical etching, chemical staining with UV laser illumination, and boiling treatment.

Paper Details

Date Published: 5 August 1994
PDF: 3 pages
Proc. SPIE 2321, Second International Conference on Optoelectronic Science and Engineering '94, (5 August 1994); doi: 10.1117/12.182128
Show Author Affiliations
Yingjun Gao, Univ. of Strathclyde (United Kingdom)
Deepak G. Uttamchandani, Univ. of Strathclyde (United Kingdom)
Brian Culshaw, Univ. of Strathclyde (United Kingdom)


Published in SPIE Proceedings Vol. 2321:
Second International Conference on Optoelectronic Science and Engineering '94
Wang Da-Heng; Anna Consortini; James B. Breckinridge, Editor(s)

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