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Proceedings Paper

Vertical cavity surface emitting laser diodes
Author(s): Kuochou Tai; L. Yang; R. J. Fischer; Tawee Tanbun-Ek; Ralph A. Logan; Yan H. Wang; Minghwei Hong; Alfred Y. Cho
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Paper Abstract

Vertical cavity surface emitting lasers (VCSELs) were realized in MBE-grown GaAS/A1GaAS and MOVPE-grown InGaAsPf.EnP material systems with emission wavelengths near 0.87 and 1.3 p.m. respectively. The GaAS/A1GaAS VCSELs incorporating epitaxially grown DBR mirrors on both sides of the cavities were operated at room temperature cw condition with maximum output power greater than 1 mW. The InGaAsP/InP VCSEL, which employed a much simpler cavity structure containing metal and dielectric mirrors, operated up to 220 K with a threshold current as low as 5 mA at 77K, indicating that improvements on the cavity design should yield room temperature lasing operation. Single longitudinal mode emission and circular near- and far-field patterns were observed for the two VCSEL structures.

Paper Details

Date Published: 1 May 1990
PDF: 6 pages
Proc. SPIE 1216, Nonlinear Optical Materials and Devices for Photonic Switching, (1 May 1990); doi: 10.1117/12.18117
Show Author Affiliations
Kuochou Tai, AT&T Bell Labs. (United States)
L. Yang, AT&T Bell Labs. (United States)
R. J. Fischer, AT&T Bell Labs. (United States)
Tawee Tanbun-Ek, AT&T Bell Labs. (United States)
Ralph A. Logan, AT&T Bell Labs. (United States)
Yan H. Wang, AT&T Bell Labs. (United States)
Minghwei Hong, AT&T Bell Labs. (United States)
Alfred Y. Cho, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1216:
Nonlinear Optical Materials and Devices for Photonic Switching
Nasser Peyghambarian, Editor(s)

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