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Proceedings Paper

Coulomb effects in optically excited semiconductor quantum dots
Author(s): Yiping Z. Hu; Johan Markus Lindberg; Stephan W. Koch; Nasser Peyghambarian
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Paper Abstract

The linear and nonlinear optical properties of semiconductor microcrystallites are analyzed taking into account the Coulomb interaction between the carriers and the influence of surface charges. A numerical matrix diagonalization method is used to evaluate the energy eigenvalues and the corresponding eigenstates. It is predicted that excited two-pair states lead to a pronounced induced absorption on the high energy side of the one-pair resonance. This prediction is confirmed by femtosecond and nanosecond experiments in CdSe and CdS quantum dots. Additionally, effects of traps or impurities and external dc electric fields are discussed.

Paper Details

Date Published: 1 May 1990
PDF: 10 pages
Proc. SPIE 1216, Nonlinear Optical Materials and Devices for Photonic Switching, (1 May 1990); doi: 10.1117/12.18113
Show Author Affiliations
Yiping Z. Hu, Univ. of Arizona (United States)
Johan Markus Lindberg, Optical Sciences Ctr./Univ. of Arizona (Finland)
Stephan W. Koch, Physics Dept. and Optical Sciences Ctr./Univ. of Arizona (Germany)
Nasser Peyghambarian, Optical Sciences Ctr./Univ. of Arizona (United States)

Published in SPIE Proceedings Vol. 1216:
Nonlinear Optical Materials and Devices for Photonic Switching
Nasser Peyghambarian, Editor(s)

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