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Proceedings Paper

Optical nonlinearity due to real and virtual charge polarizations in DC-biased quantum well structures
Author(s): Masamichi Yamanishi
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Paper Abstract

PQV0 klflds of optical nonlinearity caused by real and virtual charge polarizations in quantum well structures are discussed with some comments on their uses in practical devices. By internal field screening due to photo-excited real charge polarization, a positive feedback is established at a relatively low optical power level (-4W/cm2), in a device form without series resistors and optical resonators at room temperature. The feedback mechanism is illustrated based on experimental data. An extremely fast modulation of optical properties, which is free from the CR time constant and from carrier life time limitation, would be obtained by internal field screening due to virtual charge polarization. The theoretical considerations and implications for the ultrafast modulation are shown, and an electro-static ultrafast switch of quantum interference current through the virtual charge polarization is discussed. An ultrafast response phenomenon based on the virtual transitions is observed by an off-resonant pump light, with time-resolved optical pulse mixing technique for the measurement of photocurrent signals, supporting the ultrafast switching capability of the proposed modulation scheme.

Paper Details

Date Published: 1 May 1990
PDF: 11 pages
Proc. SPIE 1216, Nonlinear Optical Materials and Devices for Photonic Switching, (1 May 1990); doi: 10.1117/12.18107
Show Author Affiliations
Masamichi Yamanishi, Hiroshima Univ. (Japan)


Published in SPIE Proceedings Vol. 1216:
Nonlinear Optical Materials and Devices for Photonic Switching
Nasser Peyghambarian, Editor(s)

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