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Proceedings Paper

Device integration on indium phosphide for photonic switching applications
Author(s): Jean-Luc Peyre; E. Boucherez; A. Goutelle; B. Martin; Jean-Francois Vinchant; Monique Renaud
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Paper Abstract

The development of broadband telecommunication networks has led to a growing interest in photonic devices so that monolithic integration on InP material has been intensively studied to get miniaturization, high complexity, advanced functions and consequently cost reduction. We illustrate in this paper the continuous progress that has been done to make technology mature enough for integration through the fabrication of two types of Photonic Integrated Circuits: a 4 X 4 switch matrix and a multifunctional access node switch.

Paper Details

Date Published: 28 July 1994
PDF: 9 pages
Proc. SPIE 2213, Nanofabrication Technologies and Device Integration, (28 July 1994); doi: 10.1117/12.180965
Show Author Affiliations
Jean-Luc Peyre, Alcatel Alsthom Recherche (France)
E. Boucherez, Alcatel Alsthom Recherche (France)
A. Goutelle, Alcatel Alsthom Recherche (France)
B. Martin, Alcatel Alsthom Recherche (France)
Jean-Francois Vinchant, Alcatel Alsthom Recherche (France)
Monique Renaud, Alcatel Alsthom Recherche (France)


Published in SPIE Proceedings Vol. 2213:
Nanofabrication Technologies and Device Integration
Wolfgang Karthe, Editor(s)

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