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Proceedings Paper

Very high-damage threshold Al2O3/SiO2 dielectric coatings for excimer lasers
Author(s): Norbert Kaiser; Hein Uhlig; Uwe B. Schallenberg; Bernhard Anton; Ute Kaiser; Klaus R. Mann; Eric Eva
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Paper Abstract

In the EUREKA EU205 project the target products are industrial excimer lasers in the average power range of one kilowatt or more. The high power optical components and dielectric coatings have to be developed in close adaption to cavity design (optics), beam relay optics, mask imaging optics, and masks. Therefore, we used ultra low loss conventional e-beam evaporation for Al2O3/SiO2 dielectric multilayers. Based on a fundamental coating technique, both multilayer mean background absorption and absorption at localized spikes have been reduced drastically. The resulting KrF laser damage threshold of HR coatings is 16 J/cm2 (1-on-1, 30 ns, EMG-202-MSC). Measurements have been performed with an automated damage testing facility, being part of the EUREKA program. Multilayers have been characterized by Atomic Force Microscopy, Photothermal Microscopy, absorption measurements, and Spectroscopy of Sputtered Neutrals.

Paper Details

Date Published: 28 July 1994
PDF: 10 pages
Proc. SPIE 2114, Laser-Induced Damage in Optical Materials: 1993, (28 July 1994); doi: 10.1117/12.180896
Show Author Affiliations
Norbert Kaiser, Fraunhofer Einrichtung fuer Angewandte Optik und Feinmechanik Jena (Germany)
Hein Uhlig, Fraunhofer Einrichtung fuer Angewandte Optik und Feinmechanik Jena (Germany)
Uwe B. Schallenberg, Fraunhofer Einrichtung fuer Angewandte Optik und Feinmechanik Jena (Germany)
Bernhard Anton, Fraunhofer Einrichtung fuer Angewandte Optik und Feinmechanik Jena (Germany)
Ute Kaiser, Friedrich-Schiller-Univ. Jena (Germany)
Klaus R. Mann, Laser Lab. Goettingen e.V. (Germany)
Eric Eva, Laser Lab. Goettingen e.V. (Germany)


Published in SPIE Proceedings Vol. 2114:
Laser-Induced Damage in Optical Materials: 1993
Harold E. Bennett; Lloyd L. Chase; Arthur H. Guenther; Brian Emerson Newnam; M. J. Soileau, Editor(s)

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