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Proceedings Paper

Angle-resolved time-of-flight studies of laser-assisted chemical etching reactions
Author(s): Qi-Zong Qin; Kang-Zhan Zhang; Ping-He Lu
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Paper Abstract

Laser-assisted chemical etching reactions of Cl2 with semiconductor surfaces are investigated using a cw supersonic Cl2 molecular beam coupled with an angle-resolved time-of- flight (TOF) technique. TOF spectra of reaction products are measured as a function of the detection angle, laser fluence, and normal component of incident molecules' translational energy. Our results show that the differences in the above etching reactions at 355 and 1064 nm radiations can be explained by the different mechanisms of laser-stimulated desorption process. The flux of the reaction products linearly increases with increasing the normal component of the incident translational energy of Cl2 molecules. It implies that the mechanism of Cl2 chemisorption on the surfaces might be a direct translationally activated dissociative chemisorption.

Paper Details

Date Published: 21 July 1994
PDF: 8 pages
Proc. SPIE 2125, Laser Techniques for Surface Science, (21 July 1994); doi: 10.1117/12.180859
Show Author Affiliations
Qi-Zong Qin, Fudan Univ. (China)
Kang-Zhan Zhang, Fudan Univ. (China)
Ping-He Lu, Fudan Univ. (China)


Published in SPIE Proceedings Vol. 2125:
Laser Techniques for Surface Science
Hai-Lung Dai; Steven J. Sibener, Editor(s)

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