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Proceedings Paper

ZnSe/GaAs epitaxial film modification by soft x-ray irradiation
Author(s): Valery Ju. Znamenskiy; O. B. Anan'in; R. Z. Bagateliya; Yuri A. Bykovsky; Yuri V. Eryomin; Alexander Vladimirov Kovalenko; I. K. Novikov; A. A. Zhuravlev
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Paper Abstract

The possibility of ZnSe/GaAs epitaxial layer enhancing by means of soft X-ray irradiation is reported. High intensity soft X-rays in waverange 80-120 A are produced by laser plasma source with waveguide X-ray optics. The X-ray diffraction data and photoluminescence spectra excited by He-Cd laser (T=4.2 K) are represented.

Paper Details

Date Published: 21 July 1994
PDF: 7 pages
Proc. SPIE 2125, Laser Techniques for Surface Science, (21 July 1994); doi: 10.1117/12.180836
Show Author Affiliations
Valery Ju. Znamenskiy, Moscow Engineering Physics Institute (Russia)
O. B. Anan'in, Moscow Engineering Physics Institute (Russia)
R. Z. Bagateliya, Moscow Engineering Physics Institute (Russia)
Yuri A. Bykovsky, Moscow Engineering Physics Institute (Russia)
Yuri V. Eryomin, Moscow Engineering Physics Institute (Russia)
Alexander Vladimirov Kovalenko, Moscow Engineering Physics Institute (Russia)
I. K. Novikov, Moscow Engineering Physics Institute (Russia)
A. A. Zhuravlev, Moscow Engineering Physics Institute (Russia)


Published in SPIE Proceedings Vol. 2125:
Laser Techniques for Surface Science
Hai-Lung Dai; Steven J. Sibener, Editor(s)

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