Proceedings PaperOptoelectronic integration schemes for switching and computing applications
|Format||Member Price||Non-Member Price|
|GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free.||Check Access|
The properties of a GaAs-based integrated multiquantum well device capable of optoelectronic amplification are described. The device consists of a heterostructure bipolar transistor acting as a controller and a multiquantum well Stark effect p-i-n modulator grown in single step epitaxy. The integrated device also has cascadable properties and fan-out and fan-in values of 8 and 6, respectively, are measured.