Proceedings PaperOptoelectronic integration schemes for switching and computing applications
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The properties of a GaAs-based integrated multiquantum well device capable of optoelectronic amplification are described. The device consists of a heterostructure bipolar transistor acting as a controller and a multiquantum well Stark effect p-i-n modulator grown in single step epitaxy. The integrated device also has cascadable properties and fan-out and fan-in values of 8 and 6, respectively, are measured.