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Proceedings Paper

Optoelectronic integration schemes for switching and computing applications
Author(s): Pallab Bhattacharya
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Paper Abstract

The properties of a GaAs-based integrated multiquantum well device capable of optoelectronic amplification are described. The device consists of a heterostructure bipolar transistor acting as a controller and a multiquantum well Stark effect p-i-n modulator grown in single step epitaxy. The integrated device also has cascadable properties and fan-out and fan-in values of 8 and 6, respectively, are measured.

Paper Details

Date Published: 1 July 1990
PDF: 4 pages
Proc. SPIE 1215, Digital Optical Computing II, (1 July 1990); doi: 10.1117/12.18048
Show Author Affiliations
Pallab Bhattacharya, Univ. of Michigan (United States)


Published in SPIE Proceedings Vol. 1215:
Digital Optical Computing II
Raymond Arrathoon, Editor(s)

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