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Proceedings Paper

Delta-doped CCDs for enhanced UV performance
Author(s): Shouleh Nikzad; Michael E. Hoenk; Paula J. Grunthaner; Robert W. Terhune; Frank J. Grunthaner; Rusty Winzenread; Masoud M. Fattahi; Hsin-Fu Tseng
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Paper Abstract

Thin, backside-illuminated CCDs are modified by growing a delta-doped silicon layer on the back surface using molecular beam epitaxy. Delta-doped CCDs exhibit stable and uniform 100% internal quantum efficiency. The process consists of growth of an epitaxial silicon layer on a fully processed commercial CCD die in which 30% of a monolayer of boron atoms are incorporated into the lattice nominally in a single atomic layer. Long term stability was tested and showed no degradation of the device quantum efficiency over sixteen months. Reduction of the reflectivity of the Si surface by deposition of HfO2 on the CCD back surface further increased the QE, with measured QE over 80% in some regions of the spectrum. We discuss these results as well as the delta-doped CCD concept and process.

Paper Details

Date Published: 12 July 1994
PDF: 9 pages
Proc. SPIE 2278, X-Ray and UV Detectors, (12 July 1994); doi: 10.1117/12.180023
Show Author Affiliations
Shouleh Nikzad, Jet Propulsion Lab. (United States)
Michael E. Hoenk, Jet Propulsion Lab. (United States)
Paula J. Grunthaner, Jet Propulsion Lab. (United States)
Robert W. Terhune, Jet Propulsion Lab. (United States)
Frank J. Grunthaner, Jet Propulsion Lab. (United States)
Rusty Winzenread, EG&G Reticon (United States)
Masoud M. Fattahi, EG&G Reticon (United States)
Hsin-Fu Tseng, EG&G Reticon (United States)


Published in SPIE Proceedings Vol. 2278:
X-Ray and UV Detectors
Richard B. Hoover; Mark W. Tate, Editor(s)

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