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Proceedings Paper

Delta-doped CCDs as stable, high-sensitivity, high-resolution UV imaging arrays
Author(s): Shouleh Nikzad; Michael E. Hoenk; Paula J. Grunthaner; Robert W. Terhune; Frank J. Grunthaner; Rusty Winzenread; Masoud M. Fattahi; Hsin-Fu Tseng
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Paper Abstract

Delta-doped CCDs have achieved stable quantum efficiency, at the theoretical limit imposed by reflection from the Si surface in the near UV and visible. In this approach, an epitaxial silicon layer is grown on a fully-processed commercial CCD using molecular beam epitaxy. During the silicon growth on the CCD, 30% of a monolayer of boron atoms are deposited nominally within a single atomic layer, resulting in the effective elimination of the backside potential well. These devices are highly uniform and have exhibited long-term stability. To achieve significantly higher total quantum efficiency, antireflection layers can be directly deposited on the device. This was demonstrated in the 250-400 nm region.

Paper Details

Date Published: 22 July 1994
PDF: 10 pages
Proc. SPIE 2217, Aerial Surveillance Sensing Including Obscured and Underground Object Detection, (22 July 1994); doi: 10.1117/12.179949
Show Author Affiliations
Shouleh Nikzad, Jet Propulsion Lab. (United States)
Michael E. Hoenk, Jet Propulsion Lab. (United States)
Paula J. Grunthaner, Jet Propulsion Lab. (United States)
Robert W. Terhune, Jet Propulsion Lab. (United States)
Frank J. Grunthaner, Jet Propulsion Lab. (United States)
Rusty Winzenread, EG&G Reticon (United States)
Masoud M. Fattahi, EG&G Reticon (United States)
Hsin-Fu Tseng, EG&G Reticon (United States)


Published in SPIE Proceedings Vol. 2217:
Aerial Surveillance Sensing Including Obscured and Underground Object Detection
Ivan Cindrich; Nancy DelGrande; Sankaran Gowrinathan; Peter B. Johnson; James F. Shanley, Editor(s)

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