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Proceedings Paper

Silicide/SiGe Schottky diode infrared detectors
Author(s): Jorge R. Jimenez; Xiaodong Xiao; James C. Sturm; Paul W. Pellegrini; Melanie M. Weeks
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Paper Abstract

PtSi/Si/SiGe/Si Schottky diode IR detectors with extended and tunable cut-off wavelengths have been fabricated. Cut-off wavelengths depend on the SiGe composition and extend up to 10 micrometers for Si80Ge20. The cut-off wavelengths are also tunable by reverse bias. The tunability is due to the SiGe/Si offset serving as an additional potential barrier behind the Schottky barrier that can be varied in energy by a reverse bias. The sensitivity and range of the tunability is controlled by the SiGe thickness and composition. Cut-off wavelengths tunable from 4 micrometers at zero volts to 10 micrometers at 3 volts have been obtained. Quantum efficiency values are normal for operation at the long- wavelength end, but reduced over the rest of tunable range, because of the greater distance from the PtSi to the SiGe/Si offset.

Paper Details

Date Published: 15 July 1994
PDF: 11 pages
Proc. SPIE 2225, Infrared Detectors and Focal Plane Arrays III, (15 July 1994); doi: 10.1117/12.179716
Show Author Affiliations
Jorge R. Jimenez, Tufts Univ. (United States)
Xiaodong Xiao, Princeton Univ. (United States)
James C. Sturm, Princeton Univ. (United States)
Paul W. Pellegrini, Rome Lab. (United States)
Melanie M. Weeks, Rome Lab. (United States)

Published in SPIE Proceedings Vol. 2225:
Infrared Detectors and Focal Plane Arrays III
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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