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Proceedings Paper

Long-wave mercury cadmium telluride infrared detector of zero-tunnel-leakage current
Author(s): Wenzhong Yang; Changshu Wu; Honggui Zhang
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Paper Abstract

We have used the liquid phase epitaxy (LPE) and vapor phase transport epitaxy (VPTE) growth methods to fabricate double heterojunction (DH) CaTe/HgCaTe/CaZnTe and heterojunction CaTe/HgCaTe thin film materials. The detector of zero tunnel leakage current has been developed successfully by using these materials. The advantages of the VPTE method are as follows: (1) There is increased stability of surface of detector; (2) bulk band-to-band tunnel effect in detector will not occur and trap- assisted tunnel effect will be reduced owing to the N+-p junction and IR absorption region of the detector separated by using this DH material; (3) Ro is enhanced at the same time, so that sensing circuit of FPA can attain much higher injection efficiency; (4) we overcome mother solution of the Te-rich back melt HgCaTe by LPE growth CaTe on HgCaTe/CaZnTe, and (5) this growth method hardly changes characteristics of HcCgTe.

Paper Details

Date Published: 15 July 1994
PDF: 6 pages
Proc. SPIE 2225, Infrared Detectors and Focal Plane Arrays III, (15 July 1994); doi: 10.1117/12.179704
Show Author Affiliations
Wenzhong Yang, Chongqing Optoelectronic Research Institute (China)
Changshu Wu, Kunmin Institute of Physics (China)
Honggui Zhang, Kunmin Institute of Physics (China)


Published in SPIE Proceedings Vol. 2225:
Infrared Detectors and Focal Plane Arrays III
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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