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Proceedings Paper

Study of deep levels in MBE-grown HgCdTe photodiodes by deep level transient spectroscopy
Author(s): Jose E. Colon; Samuel Lakeou; Jagmohan Bajaj; Jose M. Arias; Majid Zandian; John G. Pasko
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Paper Abstract

Deep levels in p+n Hg0.73Cd0.27Te/Hg0.68Cd0.32Te planar heterostructure diodes, grown by molecular beam epitaxy on CdZnTe wafers, were studied using deep level transient spectroscopy (DLTS). The DLTS spectra showed the presence of at least two hole traps with activation energies close to midgap. The activation energy obtained from the Arrhenius plots showed a strong dependence on the aplied bias, making it difficult to obtain a precise value.

Paper Details

Date Published: 15 July 1994
PDF: 9 pages
Proc. SPIE 2225, Infrared Detectors and Focal Plane Arrays III, (15 July 1994); doi: 10.1117/12.179700
Show Author Affiliations
Jose E. Colon, Air Force Phillips Lab. (United States)
Samuel Lakeou, Air Force Phillips Lab. (United States)
Jagmohan Bajaj, Rockwell International Science Ctr. (United States)
Jose M. Arias, Rockwell International Science Ctr. (United States)
Majid Zandian, Rockwell International Science Ctr. (United States)
John G. Pasko, Rockwell International Science Ctr. (United States)


Published in SPIE Proceedings Vol. 2225:
Infrared Detectors and Focal Plane Arrays III
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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