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Proceedings Paper

High breakdown voltage InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photoenhanced chemical vapor deposition
Author(s): Biing-Der Liu; Si-Chen Lee; Kou-Chen Liu; Tai Ping Sun; Sheng-Jehn Yang
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Paper Abstract

The InSb metal oxide semiconductor field effect transistor (MOSFET) with three different channel lengths 5, 15, and 30 micrometers were fabricated successfully. The SiO2 prepared by photoenhanced chemical vapor deposition was used both as the gate insulator and the source/drain passivation layer to reduce the source/drain pn junction surface leakage current. The common sourch current voltage characteristics show a breakdown voltage exceeding 2 V indicating an excellent pn junction reverse characteristics. The capacitance-voltage and the transferred current versus gate voltage characteristics are discussed in detail to explain the geometry effect on the device performance.

Paper Details

Date Published: 15 July 1994
PDF: 12 pages
Proc. SPIE 2225, Infrared Detectors and Focal Plane Arrays III, (15 July 1994); doi: 10.1117/12.179699
Show Author Affiliations
Biing-Der Liu, National Taiwan Univ. (Taiwan)
Si-Chen Lee, National Taiwan Univ. (Taiwan)
Kou-Chen Liu, Chung Shan Institute of Science and Technology (Taiwan)
Tai Ping Sun, Chung Shan Institute of Science and Technology (Taiwan)
Sheng-Jehn Yang, Chung Shan Institute of Science and Technology (Taiwan)


Published in SPIE Proceedings Vol. 2225:
Infrared Detectors and Focal Plane Arrays III
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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