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Proceedings Paper

Three-band 1.0-2.5 um near-infrared InGaAs detector array
Author(s): Gregory H. Olsen; Michael J. Lange; Marshall J. Cohen; Dong-Su Kim; Stephen R. Forrest
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Paper Abstract

A novel three wavelength InGaAs focal plane array pixel element for detection at wavelengths from 1.0 to 2.5 micrometers , where each of three wavelength sensitive detectors are individually addressable is described. This device consists of successively smaller bandgap layers in InxGa1-xAs (x>=0.53), separated by compositionally graded layers of InAsyP1-y to decrease defects induced by lattice mismatch strain with the InP substrate and provide high-bandgap passivation. The various layers were selectively removed so that p-n junctions with different wavelength response could be formed. The three detectors have quantum efficiencies between 55 and 95% for front illumination and 15 and 60% for back illumination, and dark currents from 0.01 to 10 mA/cm2.

Paper Details

Date Published: 15 July 1994
PDF: 9 pages
Proc. SPIE 2225, Infrared Detectors and Focal Plane Arrays III, (15 July 1994); doi: 10.1117/12.179693
Show Author Affiliations
Gregory H. Olsen, Sensors Unlimited, Inc. (United States)
Michael J. Lange, Sensors Unlimited, Inc. (United States)
Marshall J. Cohen, Sensors Unlimited, Inc. (United States)
Dong-Su Kim, Princeton Univ. (United States)
Stephen R. Forrest, Princeton Univ. (United States)


Published in SPIE Proceedings Vol. 2225:
Infrared Detectors and Focal Plane Arrays III
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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