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Proceedings Paper

Normal incidence p-type strained-layer In0.3Ga0.7As/In0.52Al0.48As quantum well infrared photodetector with background limited performance at 77 K
Author(s): Sheng S. Li; Yanhua H. Wang; Jerome T. Chu; Pin Ho
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Paper Abstract

An ultra-low dark current normal incidence p-type strained-layer In0.3Ga0.7As/In0.52Al0.48As quantum well IR photodetector (PSL-QWIP) grown on semi-insulating (100) InP substrate by MBE technique has been demonstrated for the first time. This PSL-QWIP shows a background limited performance (BLIP) for TBLIP* for this PSL-QWIP were found to be 7 X 10-8A/cm2 and 5.9 X 1010 cm - (root)Hz/W, respectively, at (lambda) p equals 8.1 micrometers , Vb equals -2V, and T equals 77 K.

Paper Details

Date Published: 15 July 1994
PDF: 12 pages
Proc. SPIE 2225, Infrared Detectors and Focal Plane Arrays III, (15 July 1994); doi: 10.1117/12.179692
Show Author Affiliations
Sheng S. Li, Univ. of Florida (United States)
Yanhua H. Wang, Univ. of Florida (United States)
Jerome T. Chu, Univ. of Florida (United States)
Pin Ho, Martin Marietta Electronics Lab. (United States)


Published in SPIE Proceedings Vol. 2225:
Infrared Detectors and Focal Plane Arrays III
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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