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Proceedings Paper

Performance of generation III 640 x 480 PtSi MOS array
Author(s): Thomas S. Villani; Benjamin J. Esposito; T. J. Pletcher; Donald J. Sauer; Peter A. Levine; Frank V. Shallcross; Grazyna M. Meray; John R. Tower
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Paper Abstract

The design and performance of a third generation 640(H) X 480(V) PtSi focal plane array is presented. The 3 to 5 micron MWIR focal plane array supports interlaced, progressive scan, and subframe readout under control of on-chip digital decoders. The new design utilizes 1.25 micrometers design rules to achieve a 50% fill-factor, a noise equivalent delta temperature of <0.07 C (f/1.5, 30 Hz, 300 K), and a saturation level >1.5 X 106e. The power dissipation is less than 110 mW.

Paper Details

Date Published: 15 July 1994
PDF: 9 pages
Proc. SPIE 2225, Infrared Detectors and Focal Plane Arrays III, (15 July 1994); doi: 10.1117/12.179685
Show Author Affiliations
Thomas S. Villani, David Sarnoff Research Ctr. (United States)
Benjamin J. Esposito, David Sarnoff Research Ctr. (United States)
T. J. Pletcher, David Sarnoff Research Ctr. (United States)
Donald J. Sauer, David Sarnoff Research Ctr. (United States)
Peter A. Levine, David Sarnoff Research Ctr. (United States)
Frank V. Shallcross, David Sarnoff Research Ctr. (United States)
Grazyna M. Meray, David Sarnoff Research Ctr. (United States)
John R. Tower, David Sarnoff Research Ctr. (United States)


Published in SPIE Proceedings Vol. 2225:
Infrared Detectors and Focal Plane Arrays III
Eustace L. Dereniak; Robert E. Sampson, Editor(s)

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