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Proceedings Paper

Self-aligned molecular beam epitaxy of CdZnTe for IR focal plane arrays
Author(s): Nibir K. Dhar; Phillip R. Boyd; Paul M. Amirtharaj; John H. Dinan; J. David Benson
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Paper Abstract

The crystallographic orientation of Cd1-xZnxTe (x approximately equals 0.045) grown by molecular beam epitaxy (MBE) on a clean (planar) (100) GaAs surface can be controlled by the proper choice of the GaAs surface stoichiometry. An As-stabilized surface initiates (100) oriented growth, while the Ga-stabilized surface yields (111) oriented growth. Cd1-xZnxTe (x approximately equals 0.045) MBE layers grown in recesses of shadow masked patterned (100) GaAs substrates were found to be in the (100) orientation regardless of whether precursor surfaces were stabilized with Ga or As. The epitaxial layer's orientation and optical properties were determined by backscattered electron channeling and low temperature photoluminescence measurements, respectively. CdZnTe layers grown in recesses showed improved optical features as compared to the layers grown on planar substrates.

Paper Details

Date Published: 13 July 1994
PDF: 10 pages
Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179682
Show Author Affiliations
Nibir K. Dhar, Army Research Lab. (United States)
Phillip R. Boyd, Army Research Lab. (United States)
Paul M. Amirtharaj, National Institute of Standards and Technology (United States)
John H. Dinan, U.S. Army Night Vision & Electronic Sensors Directorate (United States)
J. David Benson, U.S. Army Night Vision & Electronic Sensors Directorate (United States)


Published in SPIE Proceedings Vol. 2228:
Producibility of II-VI Materials and Devices
Herbert K. Pollehn; Raymond S. Balcerak, Editor(s)

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