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Proceedings Paper

Substrate-quality ternary III-V single crystals for II-VI device applications: growth and characterization
Author(s): William A. Bonner; Brian Lent; Donald J. Freschi; W. Hoke
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Paper Abstract

We report the liquid encapsulated Czochralski growth and characterization of large, substrate quality single crystal Ga1-xInxAs, 0 < x < 0.10, in excess of 50 millimeters in diameter and weighing 1000 grams. This unique ability to grow large single crystals of ternary III-V compound semiconductors permits realization of the concept of substrate engineering for both homo- and heteroepitaxial applications. One area of particular interest and importance is the development of short visible wavelength (blue) lasers. Wafers with x equals 0.038 have been used for lattice matched MBE growth of ZnSe and ZnCdSe epilayers for blue emitter applications. Low temperature photoluminescence, WDX and double crystal x-ray diffraction (rocking curve) measurements have been utilized to confirm compositional uniformity and crystal quality. Characterization results for both substrate and epitaxial layer are discussed.

Paper Details

Date Published: 13 July 1994
PDF: 11 pages
Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179681
Show Author Affiliations
William A. Bonner, Crystallod Inc. (Canada)
Brian Lent, Crystallod Inc. (Canada)
Donald J. Freschi, Johnson Matthey Electronics/Crystar Research Inc. (Canada)
W. Hoke, Raytheon Co. (United States)

Published in SPIE Proceedings Vol. 2228:
Producibility of II-VI Materials and Devices
Herbert K. Pollehn; Raymond S. Balcerak, Editor(s)

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