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Proceedings Paper

Growth of large-area high-quality CdZnTe substrates by the computer-controlled vertical Bridgman method
Author(s): Louis G. Casagrande; David J. Larson; Don Di Marzio; Jun Wu; Michael Dudley; David R. Black; Harold Burdette
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Paper Abstract

The reproducible growth of large, high-quality CdZnTe crystals is crucial for providing low- cost substrates for IR focal plane arrays. We have grown 3-kg, 6.4-cm diameter Cd1-xZnxTe (x 0.04) ingots by the vertical Bridgman method, from which we have obtained large-area wafers that can yield single-crystal, twin-free substrates up to 4 cm X 6 cm. The computer-controlled thermal environment was designed to reduce thermal stresses both on the solidified boule and at the melt/solid interface. The ampoule was constructed to reduce the excess Te concentration without active atmosphere control. FTIR transmission spectra of these wafers exhibited 65% transmission from 2.5 micrometers to 20 micrometers across the entire wafer. Glow discharge mass spectrometry (GDMS) confirmed that the concentrations of detrimental impurities were 3 X 1014 cm-3. X-ray synchrotron topography showed that the substrates contained large-area subgrains with minimal residual strain at the boundaries. We discuss the suitability of these substrates for LPE growth of Hg1-yCdxyTe (y 0.2) epilayers.

Paper Details

Date Published: 13 July 1994
PDF: 12 pages
Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179680
Show Author Affiliations
Louis G. Casagrande, Grumman Corporate Research Ctr. (United States)
David J. Larson, Grumman Corporate Research Ctr. (United States)
Don Di Marzio, Grumman Corporate Research Ctr. (United States)
Jun Wu, SUNY/Stony Brook (United States)
Michael Dudley, SUNY/Stony Brook (United States)
David R. Black, National Institute of Standards and Technology (United States)
Harold Burdette, National Institute of Standards and Technology (United States)


Published in SPIE Proceedings Vol. 2228:
Producibility of II-VI Materials and Devices
Herbert K. Pollehn; Raymond S. Balcerak, Editor(s)

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