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Proceedings Paper

Scale-up of LPE processes for flexibility in manufacturing
Author(s): Peter W. Norton; Paul LoVecchio; Guy P. Pultz; James Hughes; Timothy Robertson; Vince Lukach; Kwok Wong
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Paper Abstract

Focal plane arrays fabricated in Hg1-xCdxTe have matured to the point where they are entering pilot production for military and civilian applications. Loral chose the p-on-n heterostructure photodiode architecture produced by a two step LPE process for production scale-up because of its demonstrated high performance over a broad range of cut-off wavelengths from approximately equals 4 micrometers to > 15 micrometers . To meet the manufacturing requirements of high throughput and flexibility, Loral has successfully scaled and transferred into production, both tellurium rich horizontal slider (for growth of the active n-type base layer) and mercury rich vertical dipping (for growth of the p-type cap layer) technologies. This approach capitalizes on the advantages of each process to maximize the producibility of LPE films in a manufacturing environment. This paper discusses the advantages of horizontal Te-rich growth. Production reactors have demonstrated excellent compositional uniformity (+/- 0.005 in x) over 24 cm2. Issues related to the scale-up of the equipment are discussed.

Paper Details

Date Published: 13 July 1994
PDF: 11 pages
Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179678
Show Author Affiliations
Peter W. Norton, LORAL Infrared and Imaging Systems, Inc. (United States)
Paul LoVecchio, LORAL Infrared and Imaging Systems, Inc. (United States)
Guy P. Pultz, LORAL Infrared and Imaging Systems, Inc. (United States)
James Hughes, LORAL Infrared and Imaging Systems, Inc. (United States)
Timothy Robertson, LORAL Infrared and Imaging Systems, Inc. (United States)
Vince Lukach, LORAL Infrared and Imaging Systems, Inc. (United States)
Kwok Wong, LORAL Infrared and Imaging Systems, Inc. (United States)


Published in SPIE Proceedings Vol. 2228:
Producibility of II-VI Materials and Devices
Herbert K. Pollehn; Raymond S. Balcerak, Editor(s)

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