Production of large quantities of HgCdTe on CdZnTe has been accomplished by using the dipping liquid phase epitaxy (DLPE) process from tellurium-rich solutions. The dipping LPE process has been used to grow n-type indium doped HgCdTe, extrinsically doped and vacancy dominated p-type thick films for photoconductors, and the vertically integrated photodiodes, respectively. The composition is controlled through the on-line utilization of the HgCdTe phase diagram by a constituent weight tracking technique. The composition is controlled to a CdTe mole fraction of 0.225 +/- 0.002 over long periods of time, approximately 2 years. The LPE reactors were designed for high throughput, flexibility, and low material waste.

Date Published: 13 July 1994
PDF: 7 pages
Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179677

Published in SPIE Proceedings Vol. 2228:
Producibility of II-VI Materials and Devices
Herbert K. Pollehn; Raymond S. Balcerak, Editor(s)