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Proceedings Paper

Ultrafast molecular beam epitaxy (MBE) CdTe photoconductor array for synchrotron radiation
Author(s): Sung-Shik Yoo; Brian G. Rodricks; Sivalingam Sivananthan; Jean-Pierre Faurie; Pedro A. Montano
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Paper Abstract

MBE (molecular beam epitaxy) grown CdTe layers were processed to fabricate a photoconductor array for the diagnosis of short x-ray pulses from synchrotron radiation sources. The MBE (111)B CdTe layers were grown on (100)Si substrates. Photoconductor arrays were fabricated with gaps of 5 - 50 micrometers using conventional photolithography. Electroless Au or sputtered Au/Ni was used as a contact metal. The temporal response of the resulting CdTe photoconductor was measured with mode-locked 100 fsec Ti:Sapphire laser pulses. The FWHM of single crystalline CdTe photoconductor response pulse is as short as 37 psec with a 20 psec risetime. The photoconductor responds linearly to the x-ray tube photon flux with fixed accelerating voltage up to 40 kV. A significant response increase to the x-ray beam is observed for a layer with good crystalline quality. Spatial response of the CdTe photoconductor array was measured using rotating anode and synchrotron x rays for different beam sizes. Excellent spatial resolution was obtained from narrow angular radiation synchrotron x rays. The CdTe photoconductor was exposed to synchrotron x rays for 60 hours without any noticeable degradation.

Paper Details

Date Published: 13 July 1994
PDF: 9 pages
Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179661
Show Author Affiliations
Sung-Shik Yoo, Univ. of Illinois/Chicago (United States)
Brian G. Rodricks, Argonne National Lab. (United States)
Sivalingam Sivananthan, Univ. of Illinois/Chicago (United States)
Jean-Pierre Faurie, Univ. of Illinois/Chicago (United States)
Pedro A. Montano, Univ. of Illinois/Chicago and Argonne National Lab. (United States)


Published in SPIE Proceedings Vol. 2228:
Producibility of II-VI Materials and Devices
Herbert K. Pollehn; Raymond S. Balcerak, Editor(s)

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