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Proceedings Paper

Principal strain tensor elements for (h,h,k)-oriented cubic crystals: an application to ZnSe-based heterostructures
Author(s): Daniel Fang; D. N. Talwar; Nancy C. Giles
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Paper Abstract

Strain parameters of thin films are needed to numerically simulate the optical gain of light amplification for semiconductor devices. We report a complete quantitative treatment of the stress-strain relations for several common (h,h,k) orientations. We find that earlier reports that attributed the presence of tensile elastic strain to both thermal and lattice-mismatches gave strain estimates that were too low. Using our calculations, we present a model to explain the observed shifts in excitonic recombination energies that have been reported by many groups to date.

Paper Details

Date Published: 13 July 1994
PDF: 12 pages
Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179656
Show Author Affiliations
Daniel Fang, Univ. of Dayton (United States)
D. N. Talwar, Indiana Univ. of Pennsylvania (United States)
Nancy C. Giles, West Virginia Univ. (United States)


Published in SPIE Proceedings Vol. 2228:
Producibility of II-VI Materials and Devices
Herbert K. Pollehn; Raymond S. Balcerak, Editor(s)

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