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Proceedings Paper

Structural and interfacial studies on Zn1-xMgxSySe1-y/ZnSe buffer layer/GaAs heterostructures
Author(s): Li-Hsin Kuo; Lourdes Salamanca-Riba; Bor-Jen Wu; Jim M. DePuydt; S. Guha; Greg Meis Haugen
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Paper Abstract

(100) composition modulation as well as (101) and (101) tweed strain contrast were observed in Zn1-xMgxSySe1-y epitaxial films grown on ZnSe buffer layers. Surface buckling of the TEM plan-view specimens along the (110) direction is induced by the modulated structure in the Zn1-xMgxSySe1-y films. High quality Zn1-xMgxSySe1-y films were obtained by growing a ZnSe buffer layer on As-stabilized GaAs substrates with Zn treatment of the substrate prior to the growth of the film. In these samples, no vacancy-contained Ga2Se3 interfacial layer was found at the ZnSe/GaAs interface. Samples with rough ZnSe/GaAs interfaces contained a high density of Frank partial dislocations originating at the ZnSe/GaAs interface. The interface roughness is believed to result from an As-rich GaAs surface after the oxide desorption.

Paper Details

Date Published: 13 July 1994
PDF: 10 pages
Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179652
Show Author Affiliations
Li-Hsin Kuo, Univ. of Maryland/College Park (United States)
Lourdes Salamanca-Riba, Univ. of Maryland/College Park (United States)
Bor-Jen Wu, 3M Photonics Research Lab. (United States)
Jim M. DePuydt, 3M Photonics Research Lab. (United States)
S. Guha, 3M Photonics Research Lab. (United States)
Greg Meis Haugen, 3M Photonics Research Lab. (United States)


Published in SPIE Proceedings Vol. 2228:
Producibility of II-VI Materials and Devices
Herbert K. Pollehn; Raymond S. Balcerak, Editor(s)

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