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Proceedings Paper

Iodine doping and MOCVD in-situ growth of HgCdTe p-on-n heterojunctions
Author(s): Pradip Mitra; Thomas R. Schimert; Francine Cardillo Case; Y. L. Tyan; M. Kestigian; Richard D. Starr; Margaret H. Weiler; Marion B. Reine
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Paper Abstract

Recent developments in MOCVD growth of Hg1-xCdxTe photodiodes using the interdiffused multilayer process are reported. Iodine doping of HgCdTe is described using ethyl iodide. Using ethyl iodide, the iodine doping level can be controlled in the range of 7 X 1014 - 2 X 1018 cm-3 without any memory effect. Activation of the iodine as a singly ionized donor is near 100% at concentrations < 1 X 1017 cm-3. Ethyl iodide was not found to react with the other organometallic precursors and abrupt dopant profiles are obtained. The iodine doped HgCdTe films exhibit 80 K electron mobilities >= 1 X 105 cm2/V-s, auger limited lifetimes of approximately 1 microsecond(s) for concentrations of (1-3)X1015 cm-3, and x-values approximately 0.22. LWIR p-on-n heterojunctions have been grown in situ using iodine doping for the n-type absorber layer and arsenic doping for the p- type cap layer. Detailed characterization data for the photodiodes are reported.

Paper Details

Date Published: 13 July 1994
PDF: 10 pages
Proc. SPIE 2228, Producibility of II-VI Materials and Devices, (13 July 1994); doi: 10.1117/12.179649
Show Author Affiliations
Pradip Mitra, LORAL Vought Systems Corp. (United States)
Thomas R. Schimert, LORAL Vought Systems Corp. (United States)
Francine Cardillo Case, LORAL Vought Systems Corp. (United States)
Y. L. Tyan, LORAL Vought Systems Corp. (United States)
M. Kestigian, LORAL Infrared and Imaging Systems, Inc. (United States)
Richard D. Starr, LORAL Infrared and Imaging Systems, Inc. (United States)
Margaret H. Weiler, LORAL Infrared and Imaging Systems, Inc. (United States)
Marion B. Reine, LORAL Infrared and Imaging Systems, Inc. (United States)


Published in SPIE Proceedings Vol. 2228:
Producibility of II-VI Materials and Devices
Herbert K. Pollehn; Raymond S. Balcerak, Editor(s)

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