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Proceedings Paper

Charge-transfer processes in semiconductor colloids
Author(s): Prashant V. Kamat; K. R. Gopidas
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Paper Abstract

A picosecond transient absorption spectroscopy technique has been employed to probe the charge transfer processes in Ti02 semiconductor colloids. The trapping of electrons at the TiO surface (Ti4+ sitesY was characterized from the appearance of a broad absorption in the region of 550-750 nm following the 355-nm laser pulse excitation of Ti02 colloids. The lifetime of these trapped charge carriers increased upon incorporation of a hole scavenger in the colloidal semiconductor system. The mechanistic and kinetic details of the charge injection from excited CdS into a large bandgap semiconductor such as AgI and Ti02 have also been inves-' t i ga ted.

Paper Details

Date Published: 1 April 1990
PDF: 8 pages
Proc. SPIE 1209, Picosecond and Femtosecond Spectroscopy from Laboratory to Real World, (1 April 1990); doi: 10.1117/12.17896
Show Author Affiliations
Prashant V. Kamat, Univ. of Notre Dame (United States)
K. R. Gopidas, Univ. of Notre Dame (United States)

Published in SPIE Proceedings Vol. 1209:
Picosecond and Femtosecond Spectroscopy from Laboratory to Real World
Keith A. Nelson, Editor(s)

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