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Proceedings Paper

Analysis of current spreading and series resistance in GaAs/AlGaAs proton-implanted top-surface-emitting lasers
Author(s): Marek Osinski; Wlodzimierz Nakwaski; Petros M. Varangis
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Paper Abstract

We obtain numerical results for the injection current in the active region and the total series electrical resistance of proton-implanted top-surface-emitting lasers with top annular contact. We investigate the variation of the resistance and the current uniformity over a range of values of parameters such as the number of periods in the p-type top spreading region, the active region radius and the specific contact resistance. Approximate analytical expressions are also obtained for the injection current in the confinement region and the agreement between analytical and numerical results is investigated for varying active region radius values.

Paper Details

Date Published: 30 June 1994
PDF: 9 pages
Proc. SPIE 2146, Physics and Simulation of Optoelectronic Devices II, (30 June 1994); doi: 10.1117/12.178528
Show Author Affiliations
Marek Osinski, Univ. of New Mexico (United States)
Wlodzimierz Nakwaski, Univ. of New Mexico (United States)
Petros M. Varangis, Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 2146:
Physics and Simulation of Optoelectronic Devices II
Weng W. Chow; Marek Osinski, Editor(s)

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