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Proceedings Paper

Many-body effects in the gain and refractive index of an active semiconductor medium
Author(s): Weng W. Chow
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Paper Abstract

A comprehensive microscopic theory that includes bandgap renormalization, plasma screening and interband Coulomb effects is used to calculate the gain and carrier-induced refractive index in an active semiconductor medium. This paper describes the effects of these many-body interactions on bulk and quantum well structures.

Paper Details

Date Published: 30 June 1994
PDF: 9 pages
Proc. SPIE 2146, Physics and Simulation of Optoelectronic Devices II, (30 June 1994); doi: 10.1117/12.178517
Show Author Affiliations
Weng W. Chow, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 2146:
Physics and Simulation of Optoelectronic Devices II
Weng W. Chow; Marek Osinski, Editor(s)

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