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Proceedings Paper

Study of strained-layer InGaAs/GaAs SQW RW lasers including analysis of internal coupling of modes and antiguiding effects
Author(s): Petr Georgievich Eliseev; Gerhard Beister; Aleksandr E. Drakin; Goetz Erbert; Vadim Pavlovich Konyaev; Juergen Maege
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Paper Abstract

Low threshold strained-layer InGaAs/GaAs single quantum well (SQW) lasers are studied experimentally and analyzed on the basis of a computer model for the ridge-waveguide structure. The transition from the index guiding to the gain guiding is occurring with power anomalies provided by the antiguiding contribution of excess carriers. The mode gain is found to have a maximum attainable in the index-guided mode and a negative slope range in the dependence on the carrier concentration. If the operation point reaches the gain maximum the laser action can be ceased in the index-guided mode with power drop to the spontaneous level (lasing collapse) or to lower level of an antiguided mode. Mechanisms of the mode gain decrease are considered caused by a breakdown of the lateral index guiding and by an internal coupling of modes inside the diode chip, particularly of laser mode to cap layer mode. Latter has resonances at a phase synchronism of both modes accompanied a strong drop of the mode gain.

Paper Details

Date Published: 30 June 1994
PDF: 12 pages
Proc. SPIE 2146, Physics and Simulation of Optoelectronic Devices II, (30 June 1994); doi: 10.1117/12.178509
Show Author Affiliations
Petr Georgievich Eliseev, P.N. Lebedev Physics Institute (Russia)
Gerhard Beister, Ferdinand-Braun Institute (Germany)
Aleksandr E. Drakin, P.N. Lebedev Physics Institute (Russia)
Goetz Erbert, Ferdinand-Braun Institute (Germany)
Vadim Pavlovich Konyaev, Moscow State Univ. (Russia)
Juergen Maege, Ferdinand-Braun Institute (Germany)

Published in SPIE Proceedings Vol. 2146:
Physics and Simulation of Optoelectronic Devices II
Weng W. Chow; Marek Osinski, Editor(s)

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