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Proceedings Paper

Physics and simulation of communication lasers
Author(s): Rudolf F. Kazarinov
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Paper Abstract

We review some AT&T works on physics of semiconductor lasers, including a method for calculating the electronic states and optical properties of semiconductor quantum structures applicable to bulk, quantum wells, quantum wires, and quantum dot lasers. Two-dimensional numerical simulation of carrier transport in laser structures, which allows calculation of the efficiency of injected carrier consumption by the active region, and the dependence of the laser current on applied voltage are also discussed. Calculations of quantum efficiency and threshold current for bulk InGaAsP lasers are supported by the experimental data.

Paper Details

Date Published: 30 June 1994
PDF: 11 pages
Proc. SPIE 2146, Physics and Simulation of Optoelectronic Devices II, (30 June 1994); doi: 10.1117/12.178503
Show Author Affiliations
Rudolf F. Kazarinov, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 2146:
Physics and Simulation of Optoelectronic Devices II
Weng W. Chow; Marek Osinski, Editor(s)

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