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Proceedings Paper

Transport in the base of a resonant tunneling light-emitting transistor
Author(s): Jan Genoe; Chris A. Van Hoof; Kristel Fobelets; Gustaaf Borghs
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Paper Abstract

We model the electron transport in the base of the resonant tunneling light emitting transistor, which is a crucial parameter for this device since it determines the spatial distribution of the light output. It is shown that this transport is ruled by diffusion of electrons. Carrier diffusion profiles are determined in the case that the Einstein approximation is valid (a constant diffusion coefficient). In this case, the electron transport under the emitter can be exactly calculated yielding a confluent hypergeometric function as spatial distribution. Better solutions using a charge-dependent diffusion coefficient are indicated (the Stern approach both with and without a magnetic field). This charge-dependent diffusion coefficient is calculated using the quantum capacitance concept. This makes only a numerical solution for the transport equation possible.

Paper Details

Date Published: 30 June 1994
PDF: 9 pages
Proc. SPIE 2146, Physics and Simulation of Optoelectronic Devices II, (30 June 1994); doi: 10.1117/12.178502
Show Author Affiliations
Jan Genoe, Interuniv. Micro-Elektronica Centrum (Belgium)
Chris A. Van Hoof, Interuniv. Micro-Elektronica Centrum (Belgium)
Kristel Fobelets, Interuniv. Micro-Elektronica Centrum (Belgium)
Gustaaf Borghs, Interuniv. Micro-Elektronica Centrum (Belgium)

Published in SPIE Proceedings Vol. 2146:
Physics and Simulation of Optoelectronic Devices II
Weng W. Chow; Marek Osinski, Editor(s)

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