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Proceedings Paper

Transient modeling of GaAs/AlGaAs pnpn optoelectronic switches
Author(s): Hamid Z. Fardi
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Paper Abstract

Four-layer pnpn electrophotonic devices are studied to improve both the dc characteristics and transient switching performance. The performance and analysis of AlGaAs/GaAs pnpn electrophotonic devices are examined numerically against experimental results. Preliminary results are shown to be instrumental and essential in the design and analysis of four-layer AlGaAs/GaAs PNPN bistable optoelectronic devices. The simulation methods studied in this work are aimed at overcoming the limitations of existing simulators.

Paper Details

Date Published: 30 June 1994
PDF: 12 pages
Proc. SPIE 2146, Physics and Simulation of Optoelectronic Devices II, (30 June 1994); doi: 10.1117/12.178501
Show Author Affiliations
Hamid Z. Fardi, Univ. of Colorado/Denver (United States)


Published in SPIE Proceedings Vol. 2146:
Physics and Simulation of Optoelectronic Devices II
Weng W. Chow; Marek Osinski, Editor(s)

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