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Proceedings Paper

Modeling LED emission intensity using a photon recycling approach
Author(s): Stephen M. Durbin; Jeffery L. Gray; Mahesh P. Patkar; Mark S. Lundstrom
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Paper Abstract

A numerical model for computing the intensity of spontaneous emission due to radiative recombination in semiconductor layers has been developed and incorporated into a complete numerical device simulation package. The model was constructed using an approach commonly employed in describing the effects of photon recycling. Results of initial simulation of LED structures are presented, and applications of the technique are discussed.

Paper Details

Date Published: 30 June 1994
PDF: 11 pages
Proc. SPIE 2146, Physics and Simulation of Optoelectronic Devices II, (30 June 1994); doi: 10.1117/12.178498
Show Author Affiliations
Stephen M. Durbin, Purdue Univ. (United States)
Jeffery L. Gray, Purdue Univ. (United States)
Mahesh P. Patkar, Purdue Univ. (United States)
Mark S. Lundstrom, Purdue Univ. (United States)


Published in SPIE Proceedings Vol. 2146:
Physics and Simulation of Optoelectronic Devices II
Weng W. Chow; Marek Osinski, Editor(s)

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