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Proceedings Paper

One-micrometer, radiation-hardened complementary metal oxide semiconductor for cryogenic analog applications
Author(s): Imelda Groves; George A. Brown; G. Pollack; K. Green; Larry C. Dawson; Arvind I. D'Souza; Chih-Chia Lin; M. Song; C. Hwang; Jason C.S. Woo; Kenneth P. MacWilliams
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Paper Abstract

Results are presented of a process-development effort to achieve a 1-Mrad silicon (Si) radiation-hardening capability at temperatures down to 40 K, using Texas Instruments high volume, 1-micrometer commercial process. The one-micrometer process was characterized at 77 K and 40 K: radiation effects on the baseline SiO2 gate dielectric and N-channel field effect transistor edges were observed, as were freeze-out and hot-carrier effects of the lightly doped drain implants. These freeze-out phenomena were confirmed, using SUPREM, MINIMOS, and MEDICI. The simulated data compared favorably with measured results. Simulations were run, using various implant doses and profiles to eliminate the freeze-out and hot-carrier effects in the new process. Devices having these simulated profiles were processed, and the results are presented.

Paper Details

Date Published: 23 June 1994
PDF: 13 pages
Proc. SPIE 2226, Infrared Readout Electronics II, (23 June 1994); doi: 10.1117/12.178494
Show Author Affiliations
Imelda Groves, Texas Instruments Inc. (United States)
George A. Brown, Texas Instruments Inc. (United States)
G. Pollack, Texas Instruments Inc. (United States)
K. Green, Texas Instruments Inc. (United States)
Larry C. Dawson, Rockwell International Corp. (United States)
Arvind I. D'Souza, Rockwell International Corp. (United States)
Chih-Chia Lin, Univ. of California/Los Angeles (United States)
M. Song, Univ. of California/Los Angeles (United States)
C. Hwang, Univ. of California/Los Angeles (United States)
Jason C.S. Woo, Univ. of California/Los Angeles (United States)
Kenneth P. MacWilliams, The Aerospace Corp. (United States)


Published in SPIE Proceedings Vol. 2226:
Infrared Readout Electronics II
Eric R. Fossum, Editor(s)

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