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Proceedings Paper

Reliability of oxides at low temperatures
Author(s): William J. Vigrass
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Paper Abstract

The increased interest in cryogenic semiconductors and new cryogenic processes that operate at 40 K has prompted the development of a tester to analyze low temperature reliability physics. This tester is particularly suited to study hot electron (hot e-) effects at LN2 temperatures but also capable of performing time dependent dielectric breakdown studies. The objective of this work was to study hot electron effects at low temperatures and its activation energy over a large temperature range for conventional thermal oxides in the 150 to 200 angstroms range. It has been shown over the last several years that low temperature operation can significantly enhance the hot electron degradation of a transistor.

Paper Details

Date Published: 23 June 1994
PDF: 7 pages
Proc. SPIE 2226, Infrared Readout Electronics II, (23 June 1994); doi: 10.1117/12.178489
Show Author Affiliations
William J. Vigrass, Harris Semiconductor (United States)


Published in SPIE Proceedings Vol. 2226:
Infrared Readout Electronics II
Eric R. Fossum, Editor(s)

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