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Proceedings Paper

Cryogenic GaAs JFETs
Author(s): Thomas J. Cunningham; Eric R. Fossum
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Paper Abstract

Gallium arsenide junction field-effect transistors (GaAs JFETs) are promising for deep cryogenic (< 10 K) readout electronics applications. This paper presents the structure and fabrication of GaAs (JFETs) and their performance at 4 K. It is shown that these JFETs operate normally at 4 K, with no anomalous behavior such as kinks or hysteresis. The noise voltage follows a 1/(root)f dependence and is approximately 1 (mu) v/(root)Hz at 1 Hz for a ring JFET that is 1250 micrometers in circumference and 20 micrometers long. The gate leakage current reaches 1 pA at a gate voltage of -6 V, and increases exponentially at approximately 1 decade per volt. The noise is within the limits of the requirements for typical VLWIR readout applications; the extrapolated gate leakage current at typical operating biases is higher than the required limit by two orders of magnitude. Planned improvements to reduce the leakage current are discussed.

Paper Details

Date Published: 23 June 1994
PDF: 7 pages
Proc. SPIE 2226, Infrared Readout Electronics II, (23 June 1994); doi: 10.1117/12.178479
Show Author Affiliations
Thomas J. Cunningham, Jet Propulsion Lab. (United States)
Eric R. Fossum, Jet Propulsion Lab. (United States)


Published in SPIE Proceedings Vol. 2226:
Infrared Readout Electronics II
Eric R. Fossum, Editor(s)

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