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Proceedings Paper

Circuit design approaches for improved radiation hardness
Author(s): William J. Mandl; Carl M. Rutschow
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Paper Abstract

The use of a multiple dielectric gate insulator, and the addition of a gate insulator extension and guard-bars to the NMOS transistors, has resulted in a significant increase in total-dose ionizing radiation resistance for CMOS IR readout multiplexer circuits operating at cryogenic temperatures. This paper describes the implementation of these modifications, and also some observed anomalous transistor offset voltages that were apparently due to charges trapped in the multiple dielectric gate insulator during the circuit fabrication process.

Paper Details

Date Published: 23 June 1994
PDF: 7 pages
Proc. SPIE 2226, Infrared Readout Electronics II, (23 June 1994); doi: 10.1117/12.178477
Show Author Affiliations
William J. Mandl, Aerojet Electronic Systems Div. (United States)
Carl M. Rutschow, Aerojet Electronic Systems Div. (United States)

Published in SPIE Proceedings Vol. 2226:
Infrared Readout Electronics II
Eric R. Fossum, Editor(s)

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