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Proceedings Paper

40K cryogenic rad-hard CMOS readout multiplexer fabrication process
Author(s): Damian Carver; John T. Gasner; Terry M. Pierce; N. van Vonno; M. Coole; Allen W. Hairston; Randy Wilder; Frank B. Jaworski
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Paper Abstract

Cryogenic signal processing and A/D conversion for the IR imaging and high energy physics experiment applications place severe demands on the silicon process involved, particularly in ionizing radiation environments. This paper describes a process specifically optimized for operation in the 40 K - 77 K temperature range in a total dose environment. Trade-offs of hardness, supply voltage and hot electron vulnerability are discussed and preliminary device- level results are shown.

Paper Details

Date Published: 23 June 1994
PDF: 8 pages
Proc. SPIE 2226, Infrared Readout Electronics II, (23 June 1994); doi: 10.1117/12.178471
Show Author Affiliations
Damian Carver, Harris Semiconductor (United States)
John T. Gasner, Harris Semiconductor (United States)
Terry M. Pierce, Harris Semiconductor (United States)
N. van Vonno, Harris Semiconductor (United States)
M. Coole, Loral Infrared and Imaging Systems (United States)
Allen W. Hairston, Loral Infrared and Imaging Systems (United States)
Randy Wilder, Loral Infrared and Imaging Systems (United States)
Frank B. Jaworski, Loral Infrared and Imaging Systems (United States)


Published in SPIE Proceedings Vol. 2226:
Infrared Readout Electronics II
Eric R. Fossum, Editor(s)

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