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Proceedings Paper

Reticle processing: overview of current and future reticle processing systems and system improvements that will enable the reticle manufacturer to meet future needs
Author(s): Kathy S. Milner
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Paper Abstract

As the semiconductor industry progresses to 64Mb technology, and beyond to 256Mb, reticle technology will be a major factor in wafer yield. The industry focus is currently on "optical extensions", to the extent that optical lithography may remain the primary technology down to 0.20 pm resolution, and perhaps beyond. For the reticle manufacturer, this translates into dramatically reduced tolerances for critical dimension control, line edge roughness, registration, and defect size. To meet the more stringent criteria, critical process capabilities must advance at a significantly greater rate than that accomplished during the past several years. With the advent of phase shift masks, the demands for technology development will be that much greater.

Among the areas of reticle manufacturing which must improve substantially to meet future requirements are: resist optimization, process automation and control, dry etching, feature linearity, submicron feature processing, reticle blanks and process chemistry. Additionally, the reticle manufacturer must identify, analyze, and reduce the component errors of process, equipment and raw materials.

This paper will review the evolution of reticle processing through the current state-of-the- art, and will assess the equipment, methodology, and materials required to extend reticle manufacture capabilities to the level required by 256Mb technology.

Paper Details

Date Published: 1 January 1994
PDF: 21 pages
Proc. SPIE 10273, 64-to 256-Megabit Reticle Generation: Technology Requirements and Approaches: A Critical Review, 102730A (1 January 1994); doi: 10.1117/12.177442
Show Author Affiliations
Kathy S. Milner, Photronics, Inc. (United States)

Published in SPIE Proceedings Vol. 10273:
64-to 256-Megabit Reticle Generation: Technology Requirements and Approaches: A Critical Review
Gregory K. Hearn, Editor(s)

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