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Proceedings Paper

Optically controlled microwave oscillators fabricated using GaAs/AlGaAs heterojunction bipolar transistors (HBTs) with transparent indium-tin-oxide (ITO) emitter contacts
Author(s): Paul N. Freeman; Weiqi Li; Mete Karakucuk; Jack R. East; George I. Haddad; Pallab Bhattacharya
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Paper Abstract

An optical GaAs/AlGaAs heterojunction bipolar transistor technology has been developed using transparent indium-tin-oxide emitter contacts for unobstructed through-the-top optical access. Optical tuning and injection locking has been observed in 6 GHz microwave oscillators made with this device. Optical tuning ranges up to 25 MHz and locking ranges up to 2.5 MHz have been demonstrated with the optical injection of RF power at 30 dB below the oscillator power level.

Paper Details

Date Published: 10 June 1994
PDF: 5 pages
Proc. SPIE 2155, Optoelectronic Signal Processing for Phased-Array Antennas IV, (10 June 1994); doi: 10.1117/12.177409
Show Author Affiliations
Paul N. Freeman, Univ. of Michigan (United States)
Weiqi Li, Univ. of Michigan (United States)
Mete Karakucuk, Univ. of Michigan (United States)
Jack R. East, Univ. of Michigan (United States)
George I. Haddad, Univ. of Michigan (United States)
Pallab Bhattacharya, Univ. of Michigan (United States)


Published in SPIE Proceedings Vol. 2155:
Optoelectronic Signal Processing for Phased-Array Antennas IV
Brian M. Hendrickson, Editor(s)

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