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Proceedings Paper

High-speed operation of the heterostructure field effect optical modulator
Author(s): Timothy A. Vang; Patrik A. Evaldsson; Philip A. Kiely; Geoffrey W. Taylor; Paul W. Cooke
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Paper Abstract

The Heterostructure Field Effect Optical Modulator (HFEOM) is a waveguide modulator that operates via band filling of quantum wells using charge transfer from an adjacent n+ charge sheet. The control of this charge transfer is with a gate electrode as in a field effect transistor. The band filling of the quantum wells produces a blue-shift of the absorption edge that is used to modulate the incident light. This device is compatible in both growth and processing with the associated in- plane laser and field effect transistor. The initial high speed results of HFEOMs in the InGaAs/GaAs material system are presented using a double quantum well active region. This structure has demonstrated a 35:1 extinction ratio for a 2 volt swing (-1 V to +1 V) on a 300 micrometers long device along with excellent wavelength compatibility with a 400 micrometers in-plane laser fabricated from the same wafer. Capacitance limited modulation bandwidths of 1.2 GHz and 1.6 GHz are measured for 5 micrometers and 2 micrometers rib widths respectively.

Paper Details

Date Published: 2 June 1994
PDF: 9 pages
Proc. SPIE 2144, Advanced Photonics Materials for Information Technology, (2 June 1994); doi: 10.1117/12.177224
Show Author Affiliations
Timothy A. Vang, AT&T Bell Labs. (United States)
Patrik A. Evaldsson, AT&T Bell Labs. (United States)
Philip A. Kiely, AT&T Bell Labs. (United States)
Geoffrey W. Taylor, AT&T Bell Labs. (United States)
Paul W. Cooke, Geo Center Inc. (United States)

Published in SPIE Proceedings Vol. 2144:
Advanced Photonics Materials for Information Technology
Shahab Etemad, Editor(s)

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