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Proceedings Paper

Prospects for light-emitting diodes made of porous silicon from the blue to beyond 1.5 um
Author(s): Philippe M. Fauchet; Chuan Peng; Leonid Tsybeskov; Jury V. Vandyshev; A. Dubois; L. McLoud; Sid P. Duttagupta; J. M. Rehm; G. L. McLendon; Emile Ettedgui; Y. Gao; Frederick J. Seiferth; Santosh K. Kurinec; A. Raisanen; T. E. Orlowski; Leonard J. Brillson; Gary E. Carver
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Paper Abstract

Since the 1990 discovery that porous silicon emits bright photoluminescence in the red part of the spectrum, light-emitting devices (LEDs) made of light-emitting porous silicon (LEPSi) have been demonstrated, which could be used for optical displays, sensors or optical interconnects. In this paper, we discuss our work on the optical properties of LEPSi and progress towards commercial devices. LEPSi photoluminesces not only in the red- orange, but also throughout the entire visible spectrum, from the blue to the deep red, and in the infrared, well past 1.5 micrometers . The intense blue and infrared emissions are possible only after treatments such as high temperature oxidation or low temperature vacuum annealing. These new bands have quite different properties form the usual red-orange band and their possible origins are discussed. Different LED structures are then presented and compared and the prospects for commercial devices are examined.

Paper Details

Date Published: 2 June 1994
PDF: 17 pages
Proc. SPIE 2144, Advanced Photonics Materials for Information Technology, (2 June 1994); doi: 10.1117/12.177214
Show Author Affiliations
Philippe M. Fauchet, Univ. of Rochester (United States)
Chuan Peng, Univ. of Rochester (United States)
Leonid Tsybeskov, Univ. of Rochester (United States)
Jury V. Vandyshev, Univ. of Rochester (United States)
A. Dubois, Univ. of Rochester (United States)
L. McLoud, Univ. of Rochester (United States)
Sid P. Duttagupta, Univ. of Rochester (United States)
J. M. Rehm, Univ. of Rochester (United States)
G. L. McLendon, Univ. of Rochester (United States)
Emile Ettedgui, Univ. of Rochester (United States)
Y. Gao, Univ. of Rochester (United States)
Frederick J. Seiferth, Rochester Institute of Technology (United States)
Santosh K. Kurinec, Rochester Institute of Technology (United States)
A. Raisanen, Xerox Webster Research Ctr. (United States)
T. E. Orlowski, Xerox Webster Research Ctr. (United States)
Leonard J. Brillson, Xerox Webster Research Ctr. (United States)
Gary E. Carver, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 2144:
Advanced Photonics Materials for Information Technology
Shahab Etemad, Editor(s)

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