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Proceedings Paper

Microfabrication of vertical-cavity surface-emitting laser cavities
Author(s): Axel Scherer; Jack L. Jewell; James P. Harbison; Kazuhisa Uomi; S. J. Ben Yoo; Rajaram J. Bhat; M. Walther
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Paper Abstract

We have reduced the threshold voltages and currents of vertical cavity surface emitting lasers by using dielectric high reflectivity mirrors which were deposited after the diode fabrication step. This device fabrication sequence is able to correct for inaccuracies in the crystal growth and allows the future development of more complex laser structures. The quantum- well based laser diodes were demonstrated at 0.72 micrometers , 0.85 micrometers , and 1.55 micrometers . Threshold currents and voltages of our 0.85 micrometers lasers were 2.8 mA at 1.7 V pulsed, and 4 mA when cw- pumped. The threshold currents of 5x7 micrometers 2 area 1.55 micrometers devices were 17 mA.

Paper Details

Date Published: 2 June 1994
PDF: 10 pages
Proc. SPIE 2147, Vertical-Cavity Surface-Emitting Laser Arrays, (2 June 1994); doi: 10.1117/12.177202
Show Author Affiliations
Axel Scherer, California Institute of Technology (United States)
Jack L. Jewell, Photonics Research, Inc. (United States)
James P. Harbison, Bell Communications Research (United States)
Kazuhisa Uomi, Bell Communications Research (United States)
S. J. Ben Yoo, Bell Communications Research (United States)
Rajaram J. Bhat, Bell Communications Research (United States)
M. Walther, Bell Communications Research (United States)


Published in SPIE Proceedings Vol. 2147:
Vertical-Cavity Surface-Emitting Laser Arrays
Jack L. Jewell, Editor(s)

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